?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGPF10N60UNDF rev. c1 FGPF10N60UNDF 600 v, 10 a short circuit rated igbt march 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics notes: 2: mountde on 1? square pcb (fr4 or g-10 material) symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c20 a collector current @ t c = 100 o c10 a i cm (1) pulsed collector current @ t c = 25 o c30 a i f diode forward current @ t c = 25 o c10 a p d maximum power dissipation @ t c = 25 o c42 w maximum power dissipation @ t c = 100 o c17 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 3.0 o c / w r ? jc (diode) thermal resistance, junction to case - 5.6 o c / w r ? ja thermal resistance, junction to ambient (pcb mount)(2) - 62.5 o c / w FGPF10N60UNDF 600 v, 10 a short circuit rated igbt features ? short circuit rated 10us ? high current capability ? high input impedance ? fast switching ? rohs compliant applications ? sewing machine, cnc, home appliances, motor control general description using advanced npt igbt technology, fairchild ? ?s the npt igbts offer the optimum performance for low-power inverter- driven applications where low-losses and short-circuit rugged- ness features are essential, such as sewing machine, cnc, motor control and home appliances. g c e to-220f (retractable) g c e
?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FGPF10N60UNDF rev. c1 FGPF10N60UNDF 600 v, 10 a short circuit rated igbt package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box FGPF10N60UNDF FGPF10N60UNDF to-220f tube 50ea - symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 250 ? a 600 - - v i ces collector cut-off current v ce = v ces , v ge = 0 v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0 v - - 10 ua on characteristics v ge(th) g-e threshold voltage i c = 10 ma, v ce = v ge 5.5 6.8 8.5 v v ce(sat) collector to emitter saturation voltage i c = 10 a , v ge = 15 v - 2 2.45 v i c = 10 a , v ge = 15 v, t c = 125 o c - 2.3 - v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz - 517 pf c oes output capacitance - 65 pf c res reverse transfer capacitance - 20 pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 10 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 25 o c - 8.0 ns t r rise time - 6.3 ns t d(off) turn-off delay time - 52.2 ns t f fall time - 19.1 24.8 ns e on turn-on switching loss - 0.15 mj e off turn-off switching loss - 0.05 mj e ts total switching loss - 0.2 mj t d(on) turn-on delay time v cc = 400 v, i c = 10 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 125 o c - 8.1 ns t r rise time - 7.3 ns t d(off) turn-off delay time - 55.1 ns t f fall time - 34.2 ns e on turn-on switching loss - 0.22 mj e off turn-off switching loss - 0.08 mj e ts total switching loss - 0.3 mj t sc short circuit withstand time v cc = 350 v, r g = 100 ? , v ge = 15 v, t c = 150 o c 10 - - ? s
?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FGPF10N60UNDF rev. c1 FGPF10N60UNDF 600 v, 10 a short circuit rated igbt electrical characteristics of the igbt t c = 25c unless otherwise noted electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit q g total gate charge v ce = 400 v, i c = 10 a, v ge = 15 v -37 nc q ge gate to emitter charge - 5 nc q gc gate to collector charge - 21 nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 10 a t c = 25 o c - 1.8 2.2 v t c = 125 o c - 1.7 t rr diode reverse recovery time i f = 10 a, di f /dt = 200 a/ ? s t c = 25 o c - 37.7 ns t c = 125 o c - 78.9 q rr diode reverse recovery charge t c = 25 o c- 75 nc t c = 125 o c - 221
?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FGPF10N60UNDF rev. c1 FGPF10N60UNDF 600 v, 10 a short circuit rated igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level
?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FGPF10N60UNDF rev. c1 FGPF10N60UNDF 600 v, 10 a short circuit rated igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. gate resistance gate resistance
?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FGPF10N60UNDF rev. c1 FGPF10N60UNDF 600 v, 10 a short circuit rated igbt typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. figure 16. switching loss vs gate resistance collector current figure 17. turn off switching figure 18. forward characteristics soa characteristics
?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FGPF10N60UNDF rev. c1 FGPF10N60UNDF 600 v, 10 a short circuit rated igbt typical performance characteristics figure 19. reverse recovery current figure 20. stored charge figure 21. reverse recovery time figure 22.transient thermal impedance of igbt t 1 p dm t 2 t 1 p dm t 2
?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FGPF10N60UNDF rev. c1 FGPF10N60UNDF 600 v, 10 a short circuit rated igbt mechanical dimensions to-220f (retractable) * front/back side isolation voltage : ac 2700v
FGPF10N60UNDF 600 v, 15 a short circuit rated igbt FGPF10N60UNDF rev. c1 www.fairchildsemi.com 9 ?2012 fairchild semiconductor corporation trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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